Micron’s 3D NAND SSD Products to be Available This Summer

3 Jun

U.S. memory chip maker Micron announced at Computex 2016 in Taipei that its new SSDs made with 3D NAND technology, including 1100 SATA SSD and 2100 PCIe NVMe SSD, will be available this summer. The latter will be Micron’s first client PCIe solution and its first PCIe SSD with 3D NAND technology.

According to Micron, its latest SSD is the first 3D NAND product to employ floating gate cell technology. Micron said it utilizes the CMOS circuitry and stacks 32 storage tiers to achieve the highest-capacity NAND die currently available, in order to provide larger storage, faster speeds and better performance.

The 1100 SATA SSD has a capacity of up to 2TB, the largest of any TLC 3D NAND currently on the market. The SSD has 500MB/s write speeds, 530MB/s read speeds, and a 1.5 million hours MTBF rating. Based on its total bytes written (TBW) and read/write speeds, the 512GB and 1TB configurations are expected to be the more popular versions. Micron also believes the SSD will work well in regular laptop computers due to its favorable balance between performance and energy consumption.

The 2100 PCIe NVMe SSD is designed to meet the needs of optimized Intel platforms. The SSD provides plug and play performance and focuses on high-end applications such as video editing, online streaming and gaming. According to Micron, the SSD has four times the bandwidth of standard SATA SSDs. The read/write speeds, however, are not revealed as they were still under testing.

The 1100 SATA SSD will be mass produced in July this year and the production of the 2100 PCIe NVMe SSD is also expected to begin in late summer this year. As the costs of HDDs and SSDs become increasingly alike, particularly in low-end consumer electronics, Micron said it will continue its investment in 3D NAND and shifts most of its SSDs — at an undisclosed ratio — to 3D NAND technology this year.

As the traditional stacked NAND flash technology remained on the Moore’s Law curve and reached performance bottleneck, memory chip leaders including Micron, Toshiba and Samsung gradually adopted 3D NAND technology to increase memory density.
(Photo courtesy: TechNews)

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