Mitsubishi Electric Develops World’s First Ultra-Wideband GaN Doherty Power Amplifier for Next Generation Wireless Base Stations

12 Jan

Mitsubishi Electric Corporation and Mitsubishi Electric Research Laboratories (MERL) announced today their development of an ultra-wideband gallium nitride (GaN) Doherty power amplifier for next generation base stations that is compatible with a world-leading range (company estimate) of frequency bands above 3GHz to cover an operating bandwidth of 600MHz. The technology is expected to help reduce the size and energy consumption of next generation wireless base stations. Technical details will be presented at the IEEE Topical Conference on RF/Microwave Power Amplifiers for Wireless and Radio Applications (PAWR2017) during Radio & Wireless Week (RWW) in the U.S. city of Phoenix, Arizona from January 15-18, 2017.

To help meet a rapid rise in demand for increasing wireless capacity, mobile technologies are shifting to next generation systems that raise capacity by allocating new frequency bands above 3GHz and using multiple frequency bands. Generally, power amplifiers operate with less efficiency in higher frequencies. Also, different power amplifiers are needed for different frequency bands, which can require larger base stations. As such, extra-efficient power amplifiers compatible with multiple frequencies are in demand.

Mitsubishi Electric’s new ultra-wideband GaN Doherty power amplifier uses advanced frequency-compensation circuits with Doherty architecture for enhanced efficiency in a very wide band range. Its efficiency rating of 600MHz above 3GHz was the world’s widest level as of January 12, 2017.

(TPG images)