Toshiba Releases Automotive 40V N-channel Power MOSFETs in New Package

19 Apr

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released two new MOSFETs “TPHR7904PB” and “TPH1R104PB” housed in the small low-resistance SOP Advance (WF) package, as new additions to the automotive 40V N-channel power MOSFET series. Mass production starts today.

Fabricated using the latest ninth generation trench U-MOS IX-H process and housed in a small low-resistance package, the new MOSFETs provide low on-resistance and thus help reduce conduction loss. The U-MOS IX-H design also lowers switching noise compared with Toshiba’s previous design (U-MOS IV), helping to reduce EMI (Electromagnetic Interference).

The SOP Advance (WF) package adopts a wettable flank terminal structure, which enables AOI (Automated Optical Inspection) after soldering.

Applications

  • Electric power steering (EPS)
  • Load switches
  • Electric pumps

Features

  • Provides a maximum on-resistance, RDS(ON)max, of 0.79 mΩ from the use of the U-MOS IX-H process and the SOP Advance(WF) package.
  • Low-noise characteristics reduce electromagnetic interference (EMI).
  • Available in a small low-resistance package with a wettable flank terminal structure.

Main Specifications

(Unless otherwise specified, @Ta=25°C)

Part Number

Drain-Source
voltage
VDSS
(V)

Drain
current
(DC)
ID
(A)

Drain-Source
on-resistance

RDS(ON) max.(mΩ)

Built-in
Zener Diode
between
Gate-Source

Series

@VGS=6V

@VGS=10V

TPH1R104PB 40 120 1.96 1.14 No U-MOS IX
TPHR7904PB 150 1.3 0.79 No U-MOS IX

Follow the link below for more on MOSFET line-up.
https://toshiba.semicon-storage.com/ap-en/product/mosfet.html

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